ISP650P06NMXTSA1

Datasheet

Digi-Key Part Number	ISP650P06NMXTSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Part Number	ISP650P06NMXTSA1
Description	MOSFET P-CH 60V SOT223-4
Manufacturer Standard Lead Time	10 Weeks
Detailed Description	P-Channel 60V 3.7A (Ta) 1.8W (Ta), 4.2W (Tc) Surface Mount PG-SOT223-4
Customer Reference

Documents & Media

Datasheets	Power, Sensing Selection Guide 2019
PCN Packaging	Mult Dev Cover Tape Chg 9/Mar/2020 Mult Dev Pkg Update 28/May/2020
EDA / CAD Models	ISP650P06NMXTSA1 by SnapEDA ISP650P06NMXTSA1 by Ultra Librarian

Product Attributes

TYPE	DESCRIPTION	SELECT ALL
Categories	Discrete Semiconductor Products
Categories	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	65mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id	4V @ 1.037mA
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 30V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta), 4.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-4
Package / Case	TO-261-4, TO-261AA

Infineon Technologies