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IRF4104PbF

香港天翔電子有限公司 / 10-08 10:49

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Product Attributes
TYPEDESCRIPTIONSELECT ALL 
CategoriesDiscrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
SeriesHEXFET®
PackagingTube 
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3000pF @ 25V
FET Feature-
Power Dissipation (Max)140W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3


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