The RS3J-E3/57T is DIODE GEN PURP 600V 3A DO214AB, that includes Cut Tape (CT) Alternate Packaging Packaging, they are designed to operate with a RS3J-E3/9AT Part Aliases, Unit Weight is shown on datasheet note for use in a 0.007408 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in DO-214AB, SMC, as well as the Surface Mount Mounting Type, the device can also be used as DO-214AB, (SMC) Supplier Device Package. In addition, the Configuration is Single, the device is offered in Fast Recovery = 200mA (Io) Speed, the device has a Standard of Diode Type, and Current Reverse Leakage Vr is 10μA @ 600V, and the Voltage Forward Vf Max If is 1.3V @ 2.5A, and Voltage DC Reverse Vr Max is 600V, and the Current Average Rectified Io is 3A, and Reverse Recovery Time trr is 250ns, and the Capacitance Vr F is 34pF @ 4V, 1MHz, it has an Operating Temperature Junction range of -55°C ~ 150°C, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Vf Forward Voltage is 1.3 V, and If Forward Current is 3 A, and the Max Surge Current is 100 A, and Recovery Time is 250 ns.

RS3JB-13-G with user guide manufactured by DIODES. The RS3JB-13-G is available in SMBDO-214AA Package, is part of the IC Chips.

RS3JB-13-G-90 with circuit diagram manufactured by DIODES. The RS3JB-13-G-90 is available in SMB Package, is part of the IC Chips.

RS3JBF with EDA / CAD Models manufactured by TOSHIBA/VISHAY. The RS3JBF is available in SMBF Package, is part of the IC Chips.