The ZXMN6A09GTA parts is 60V N-CHANNEL ENHANCEMENT MODE MOSFET, manufactured by DIODES are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values of electronic parts from the world's leading manufacturers. The ZXMN6A09GTA components of Jotrin Electronics are carefully chosen, undergo stringent quality control and are successfully meet at all required standards.
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Transistor Polarity | N-Channel | Package / Case | SOT-223 |
---|---|---|---|
Drain Source Breakdown Voltage | 60 V | Packaging | Reel |
Gate Source Breakdown Voltage | +/- 20 V | Fall Time | 4.6 ns |
Continuous Drain Current | 7.5 A | Minimum Operating Temperature | - 55 C |
Resistance Drain Source RDS (on) | 0.04 Ohms | Power Dissipation | 3.9 W |
Configuration | Single Dual Drain | Rise Time | 5 ns |
Maximum Operating Temperature | + 150 C | Factory Pack Quantity | 1000 |
Mounting Style | SMD/SMT | Typical Turn Off Delay Time | 25.3 ns |
The ZXMN6A09DN8TA is MOSFET 2N-CH 60V 4.3A 8-SOIC, that includes ZXMN6A Series, they are designed to operate with a Cut Tape (CT) Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 74 mg, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-SOIC (0.154", 3.90mm Width), as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 8-SO of Supplier Device Package, and Configuration is Dual Dual Drain, and the FET Type is 2 N-Channel (Dual), and Power Max is 1.25W, and the Transistor Type is 2 N-Channel, and Drain to Source Voltage Vdss is 60V, and the Input Capacitance Ciss Vds is 1407pF @ 40V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 4.3A, and Rds On Max Id Vgs is 40 mOhm @ 8.2A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 24.2nC @ 5V, and the Pd Power Dissipation is 2.1 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 4.6 ns, and the Rise Time is 5 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 5.1 A, and Vds Drain Source Breakdown Voltage is 60 V, and the Rds On Drain Source Resistance is 40 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 25.3 ns, and Typical Turn On Delay Time is 4.9 ns, and the Channel Mode is Enhancement.
The ZXMN6A09DN8TC is MOSFET 2N-CH 60V 4.3A 8SOIC, that includes 3V @ 250μA Vgs th Max Id, they are designed to operate with a 8-SOP Supplier Device Package, Rds On Max Id Vgs is shown on datasheet note for use in a 40 mOhm @ 8.2A, 10V, that offers Power Max features such as 1.25W, Packaging is designed to work in Tape & Reel (TR) Alternate Packaging, as well as the 8-SOIC (0.154", 3.90mm Width) Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1407pF @ 40V Input Capacitance Ciss Vds, the device has a 24.2nC @ 5V of Gate Charge Qg Vgs, and FET Type is 2 N-Channel (Dual), and the FET Feature is Logic Level Gate, and Drain to Source Voltage Vdss is 60V, and the Current Continuous Drain Id 25°C is 4.3A.
ZXMN6A09DN8 with circuit diagram manufactured by Zetex. The ZXMN6A09DN8 is available in SOP8 Package, is part of the FETs - Arrays.
ZXMN6A09G with EDA / CAD Models manufactured by ZETEX. The ZXMN6A09G is available in SOT-223 Package, is part of the FETs - Single.