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Transistor Polarity | N and P-Channel | Mounting Style | SMD/SMT |
---|---|---|---|
Drain Source Breakdown Voltage | +/- 30 V | Package / Case | SOP-8 |
Gate Source Breakdown Voltage | +/- 20 V | Forward Transconductance gFS (Max / Min) | 7.7 S, 5.2 S |
Continuous Drain Current | 6.9 A, - 5 A | Gate Charge Qg | 4.3 nC, 4 nC |
Resistance Drain Source RDS (on) | 28 mOhms at 10 V, 56 mOhms at -10 V | Minimum Operating Temperature | - 55 C |
Configuration | Dual Dual Drain | Power Dissipation | 2 W |
Maximum Operating Temperature | + 150 C | Factory Pack Quantity | 2500 |
The DMC3028LSDX-13 is MOSFET N/P-CH 30V 5.5A/5.8A 8SO, that includes DMC3028 Series, they are designed to operate with a Tape & Reel (TR) Packaging, Unit Weight is shown on datasheet note for use in a 0.002610 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-SOIC (0.154", 3.90mm Width), as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 8-SO of Supplier Device Package, and Configuration is 1 N-Channel 1 P-Channel, and the FET Type is N and P-Channel, and Power Max is 1.2W, and the Transistor Type is 1 N-Channel 1 P-Channel, and Drain to Source Voltage Vdss is 30V, and the Input Capacitance Ciss Vds is 641pF @ 15V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 5.5A, 5.8A, and Rds On Max Id Vgs is 27 mOhm @ 6A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 13.2nC @ 10V, and the Pd Power Dissipation is 1.3 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 9.7 ns 28 ns, and the Rise Time is 3.1 nS 4.9 nS, and Id Continuous Drain Current is 7.1 A, and the Vds Drain Source Breakdown Voltage is 30 V, and Vgs th Gate Source Threshold Voltage is 3 V - 3 V, and the Rds On Drain Source Resistance is 28 mOhms, and Transistor Polarity is N-Channel P-Channel, and the Typical Turn Off Delay Time is 14 ns 44 ns, and Typical Turn On Delay Time is 2.5 ns 3.5 ns, and the Qg Gate Charge is 5.2 nC 16.4 nC, and Forward Transconductance Min is 12 S 18.6 S, and the Channel Mode is Enhancement.
DMC3028LSDXQ-13 with user guide, that includes 3V @ 250μA Vgs th Max Id, they are designed to operate with a 1 V - 1 V Vgs th Gate Source Threshold Voltage, Vgs Gate Source Voltage is shown on datasheet note for use in a +/- 20 V +/- 20 V, that offers Vds Drain Source Breakdown Voltage features such as 30 V - 30 V, Unit Weight is designed to work in 0.002610 oz, as well as the 3.3 ns 9.7 ns Typical Turn On Delay Time, the device can also be used as 22.3 ns 60.5 ns Typical Turn Off Delay Time. In addition, the Transistor Polarity is N-Channel P-Channel, the device is offered in Si Technology, the device has a 8-SO of Supplier Device Package, and Series is DMC3028, and the Rise Time is 4.4 ns 17.1 ns, and Rds On Max Id Vgs is 27 mOhm @ 6A, 10V, and the Rds On Drain Source Resistance is 35 mOhms 41 mOhms, and Qg Gate Charge is 13.2 nC 22 nC, and the Power Max is 1.2W, and Pd Power Dissipation is 1.5 W, and the Packaging is Digi-ReelR Alternate Packaging, and Package Case is 8-SOIC (0.154", 3.90mm Width), it has an Operating Temperature range of -55°C ~ 150°C (TJ), and Mounting Style is SMD/SMT, and the Mounting Type is Surface Mount, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and Input Capacitance Ciss Vds is 641pF @ 15V, and the Id Continuous Drain Current is 7.2 A - 7.6 A, and Gate Charge Qg Vgs is 13.2nC @ 5V, and the FET Type is N and P-Channel, and FET Feature is Standard, and the Fall Time is 5.3 ns 40.4 ns, and Drain to Source Voltage Vdss is 30V, and the Current Continuous Drain Id 25°C is 5.5A, 5.8A, and Configuration is Dual, and the Channel Mode is Enhancement.
The DMC3032LSD-13 is MOSFET N/P-CH 30V 8.1A/7A 8SOP, that includes N-Channel P-Channel Configuration, they are designed to operate with a 8.1A, 7A Current Continuous Drain Id 25°C, Drain to Source Voltage Vdss is shown on datasheet note for use in a 30V, that offers FET Feature features such as Logic Level Gate, FET Type is designed to work in N and P-Channel, as well as the 9.2nC @ 10V Gate Charge Qg Vgs, the device can also be used as 8.1 A 7 A Id Continuous Drain Current. In addition, the Input Capacitance Ciss Vds is 404.5pF @ 15V, the device is offered in Surface Mount Mounting Type, the device has a SMD/SMT of Mounting Style, and Number of Channels is 2 Channel, it has an Operating Temperature range of -55°C ~ 150°C (TJ), and Package Case is 8-SOIC (0.154", 3.90mm Width), and the Packaging is Digi-ReelR Alternate Packaging, and Pd Power Dissipation is 2.5 W, and the Power Max is 2.5W, and Rds On Drain Source Resistance is 46 mOhms 53 mOhms, and the Rds On Max Id Vgs is 32 mOhm @ 7A, 10V, and Series is DMC3032, and the Supplier Device Package is 8-SO, and Technology is Si, and the Transistor Polarity is N-Channel P-Channel, and Transistor Type is 1 N-Channel 1 P-Channel, and the Unit Weight is 0.002610 oz, and Vds Drain Source Breakdown Voltage is 30 V 30 V, and the Vgs th Max Id is 2.1V @ 250μA.
DMC3032LSD-13-F with EDA / CAD Models manufactured by DIODES. The DMC3032LSD-13-F is available in SOP8 Package, is part of the IC Chips.