The DMN7022LFG-7 parts is 75V N-CHANNEL ENHANCEMENT MODE MOSFET, manufactured by DIODES are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values of electronic parts from the world's leading manufacturers. The DMN7022LFG-7 components of Jotrin Electronics are carefully chosen, undergo stringent quality control and are successfully meet at all required standards.
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Series | DMN70 | Fall Time | 3.9 ns |
---|---|---|---|
Packaging | Reel | Rise Time | 5.7 ns |
Unit Weight | 0.002540 oz | Vgs Gate Source Voltage | 20 V |
Mounting Style | SMD/SMT | Id Continuous Drain Current | 7.8 A |
Package Case | PowerDI-3333 | Vds Drain Source Breakdown Voltage | 75 V |
Technology | Si | Vgs th Gate Source Threshold Voltage | 3 V |
Number of Channels | 1 Channel | Rds On Drain Source Resistance | 14.6 mOhms |
Configuration | Single | Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel | Typical Turn Off Delay Time | 19.6 ns |
Pd Power Dissipation | 0.9 W | Typical Turn On Delay Time | 6.1 ns |
Maximum Operating Temperature | + 150 C | Qg Gate Charge | 26.4 nC |
Minimum Operating Temperature | - 55 C | Channel Mode | Enhancement |
DMN7022LFG-13 with pin details, that includes DMN70 Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.002540 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in PowerDI-3333, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 0.9 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 3.9 ns, and the Rise Time is 5.7 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 7.8 A, and Vds Drain Source Breakdown Voltage is 75 V, and the Vgs th Gate Source Threshold Voltage is 3 V, and Rds On Drain Source Resistance is 14.6 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 19.6 ns, and the Typical Turn On Delay Time is 6.1 ns, and Qg Gate Charge is 26.4 nC, and the Channel Mode is Enhancement.
DMN67D8LDW-7 with user guide, that includes 2.5V @ 250μA Vgs th Max Id, they are designed to operate with a Si Technology, Supplier Device Package is shown on datasheet note for use in a SOT-363, that offers Series features such as DMN67, Rds On Max Id Vgs is designed to work in 5 Ohm @ 500mA, 10V, as well as the 320mW Power Max, the device can also be used as Tape & Reel (TR) Alternate Packaging Packaging. In addition, the Package Case is 6-TSSOP, SC-88, SOT-363, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device has a Surface Mount of Mounting Type, and Input Capacitance Ciss Vds is 22pF @ 25V, and the Gate Charge Qg Vgs is 0.82nC @ 10V, and FET Type is 2 N-Channel (Dual), and the FET Feature is Standard, and Drain to Source Voltage Vdss is 60V, and the Current Continuous Drain Id 25°C is 230mA.
DMN67D8LW-13 with circuit diagram, that includes Reel Packaging, they are designed to operate with a DMN67 Series, Technology is shown on datasheet note for use in a Si.
DMN67D8LW-7 with EDA / CAD Models, that includes Si Technology, they are designed to operate with a Reel Packaging, Series is shown on datasheet note for use in a DMN67.